Zebrev Gennady I.

Showing publications for last 3 years

1. Article
   Web of Science & Scopus
   Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs // Russian Microelectronics, 2023 Vol. 52, No. Suppl 1, Q4 pp. S6-S13 doi
2. RSCI DEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORSDEVELOPMENT OF METHODS FOR ELECTRICAL CHARACTARIZATION AND MODELING OF POWER GALLIUM NITRIDE TRANSISTORS // 2023 pp. 78-79
3. Article
   Web of Science & Scopus
   Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire Transistors // IEEE Transactions on Electron Devices, 2023 Q1 doi
4. Article
   Web of Science & Scopus
   Compact Modeling of Body Effect for 'Extrinsic' MOSFETs // Moscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings, 2022 TOP10 doi
5. Article
   Web of Science & Scopus
   Investigation and Simulation of SEL Cross Sections at Different Temperatures // IEEE Transactions on Nuclear Science, 2022 Q1 doi
6. Article
   Web of Science & Scopus
   Long-term Irradiation Effects in p-MNOS Transistor: Experiment Results // Proceedings of SPIE - The International Society for Optical Engineering, 2022 Vol. 12157, Q4 doi
7. Article
   Web of Science & Scopus
   A universal approach to FET compact modeling: Case study for MESFETs and OFETs // Proceedings of SPIE - The International Society for Optical Engineering, 2022 Vol. 12157, Q4 doi
8. Article
   Web of Science & Scopus
   Accounting for the body effect in the compact modeling of an extrinsic MOSFET drain current in the linear and saturation regimes // Proceedings of SPIE - The International Society for Optical Engineering, 2022 Vol. 12157, Q4 doi
9. RSCI INVESTIGATIONS OF SINGLE EFFECTS IN DIGITAL-ANALOG MICROCHIPS // 2021 pp. 462-463
10. Article
    Web of Science & Scopus
    An Accurate Analytical Modeling of Contact Resistances in MOSFETs // Proceedings of the International Conference on Microelectronics, ICM, 2021 Vol. 2021-September, Нет pp. 97-99 doi

Showing conferences for last 3 years