Gusev A.S.

Gusev Alexander S.

Degree: Candidate of Sciences (PhD) in Physics and Mathematics

Associate Professor

Department of Condensed Matter Physics (67, ИНТЭЛ КАФ.67)

Deputy Director

Institute of Nuclear Electronics (Центр радиофотоники и свч-технологий института нанотехнологий в электронике, спинтронике и фотонике НИЯУ МИФИ)

Senior Research Fellow

Лаборатория «Технологии проектирования нитридгаллиевой ЭКБ функциональных систем» центра радиофотоники и СВЧ-технологий института нанотехнологий в электронике, спинтронике и фотонике НИЯУ МИФИ (ИНТЭЛ ЦРСТ ТПНФС)
  • 44a-15
  • 8438
Send message Spring 2024. Schedule

Languages

english
Works at MEPhI since 2010
Work Experience: 23 years

Courses

1. Devices of Micro-and Nanoelectronics: Physics and Technology
2. Experimental Academic Research Work
3. Heterogeneous land mass and technology of microwave electronics
4. Numeric Methods and Applied Software in Electronics
5. Physics of Semiconductors

Publication activity

3
h-index (Web of Science)
5
h-index (Scopus)
5
h-index (РИНЦ)

Showing publications for last 3 years

  1. Article
    Web of Science & Scopus
    Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods // Journal of Applied Spectroscopy, 2023 Vol. 90, No. 5, Q4 pp. 1000-1011 doi
  2. RSCI INVESTIGATION OF STRESS IN THE CRYSTAL STRUCTURE OF GRAPHENE FILMS BY THE IN SITU RHEED METHODINVESTIGATION OF STRESS IN THE CRYSTAL STRUCTURE OF GRAPHENE FILMS BY THE IN SITU RHEED METHOD // 2023 pp. 116-117
  3. RSCI GROWTH AND CHARACTERIZATION OF GROUP III NITRIDES HEMT HETEROSTRUCTURES WITH AN AlN ULTRATHIN BARRIERGROWTH AND CHARACTERIZATION OF GROUP III NITRIDES HEMT HETEROSTRUCTURES WITH AN AlN ULTRATHIN BARRIER // 2023 pp. 29-30
  4. RSCI SPIN SYSTEM NV-13C IN MAGNITOMETRYSPIN SYSTEM NV-13C IN MAGNITOMETRY // 2023 pp. 168-169
  5. Article
    Web of Science & Scopus
    Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study // Applied Sciences (Switzerland), 2022 Vol. 12, No. 22, Q2 doi
  6. RSCI STUDY OF THE ELECTRICAL PARAMETERS OF 3C-SIC/SI HETEROSTRUCTURESSTUDY OF THE ELECTRICAL PARAMETERS OF 3C-SIC/SI HETEROSTRUCTURES // 2022 pp. 66-67
  7. RSCI ODMR OF THE NV - 13C COMPLEX IN A HOMOEPITAXIAL DIAMOND LAYERODMR OF THE NV - 13C COMPLEX IN A HOMOEPITAXIAL DIAMOND LAYER // 2022 pp. 84-85
  8. RSCI INVESTIGATION OF THE FORMATION OF NV CENTERS ON VARIOUS CRYSTALLOGRAPHIC PLANES OF DIAMONDINVESTIGATION OF THE FORMATION OF NV CENTERS ON VARIOUS CRYSTALLOGRAPHIC PLANES OF DIAMOND // 2022 pp. 86-87
  9. RSCI FORMATION OF NITROGEN VACANCY COLOR CENTERS IN EPITAXIAL DIAMOND FILM BY LOW ENERGY ELECTRON IRRADIATIONFORMATION OF NITROGEN VACANCY COLOR CENTERS IN EPITAXIAL DIAMOND FILM BY LOW ENERGY ELECTRON IRRADIATION // 2022 pp. 62-63
  10. Article
    Web of Science & Scopus
    Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN // Journal of Applied Physics, 2021 Vol. 130, No. 18, Q1 doi
  11. Article
    Web of Science & Scopus
    Hyperfine interactions in the nv‐13 c quantum registers in diamond grown from the azaadamantane seed // Nanomaterials, 2021 Vol. 11, No. 5, Q1 doi
  12. Article
    Web of Science & Scopus
    Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer // Technical Physics, 2021 Q4 doi

Showing conferences for last 3 years

  1. Сентябрь 2021 3rd International Conference on HYPERFINE Interactions and their Applications Report: Quantum registers NV13C in diamond grown from isotopic azaadamantane seed: predictions of hyperfine interactions
  2. Ноябрь 2021 IX International Scientific Conference «ACTUAL PROBLEMS OF SOLID STATE PHYSICS» (APSSP-2021) Report: Simulation of the JCC coupling in diamond clusters hosting the NV center
  3. Ноябрь 2021 Russian Science and Technology Innovation Matchmaking Meeting (organizer: Hubei Wuhan China-Russia Science and Technology Cooperation Center) Report: Application of new nano materials in electronic and optoelectronic components

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