Tsunvaza Damir

Showing publications for last 3 years

1. RSCI THE DESIGN OF ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGE // 2023 pp. 66-67
2. Article
   Web of Science & Scopus
   Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor // Russian Microelectronics, 2023 Vol. 52, No. 3, Q4 pp. 160-166 doi
3. RSCI THE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGETHE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGE // 2022 pp. 24-25
4. Article The Design of Non-Linear Model of pHEMT Transistor Based on GaAs // IX International Youth Scientific School-Conference, National Research Nuclear University MEPhI, 2022 pp. 201-202
5. Article THE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGE // 13th International Conference on Physics and Technology of Nanoheterostructure Microwave Electronics, National Research Nuclear University MEPhI, 2022 pp. 24-25

Showing conferences for last 3 years

1. Сентябрь 2024 10th Scientific Conference "Electronic components and microelectronic modules" Report: The experimental study of active and passive elements based on AIIIBV heterostructures for the X-, Ku-band microwave LNA MICs
2. Сентябрь 2024 6th School of Young Scientists within the framework of the Russian Forum "Microelectronics 2024" Report: The experimental study of the temperature characteristics of elements on a GaAs wafer in the microwave frequency range
3. Апрель 2022 IX International Youth Scientific School-Conference "Modern Problems of Physics and Technology" Report: The design of non-linear model of pHEMT transistor based on GaAs
4. Май 2022 "Open Readings named after RAS Corresponding Member, Professor V.G. Mokerov" ХIII International Conference on Physics and Technology of Nanoheterostructure Microwave Electronics Report: THE DESIGN OF PASSIVE ELEMENTS OF MIC BASED ON GaAs IN MICROWAVE RANGE