Borisenko Denis P.

Showing publications for last 3 years

1. Article
   Web of Science & Scopus
   Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier // Russian Microelectronics, 2024 Vol. 53, No. 3, Q4 pp. 252-259 doi
2. RSCI INVESTIGATION OF STRESS IN THE CRYSTAL STRUCTURE OF GRAPHENE FILMS BY THE IN SITU RHEED METHODINVESTIGATION OF STRESS IN THE CRYSTAL STRUCTURE OF GRAPHENE FILMS BY THE IN SITU RHEED METHOD // 2023 pp. 116-117
3. Article
   Web of Science & Scopus
   Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study // Applied Sciences (Switzerland), 2022 Vol. 12, No. 22, Q2 doi
4. Article Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study // Applied Sciences, MDPI, 2022 Vol. 12, No. 11516 pp. 1-17 doi
5. RSCI STUDY OF THE ELECTRICAL PARAMETERS OF 3C-SIC/SI HETEROSTRUCTURESSTUDY OF THE ELECTRICAL PARAMETERS OF 3C-SIC/SI HETEROSTRUCTURES // 2022 pp. 66-67
6. Article
   Web of Science & Scopus
   Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN // Journal of Applied Physics, 2021 Vol. 130, No. 18, Q1 doi

Showing conferences for last 3 years