Klochkov A.N.

Klochkov Aleksey N.

Degree: Candidate of Sciences (PhD) in Physics and Mathematics

Associate Professor

Department of Condensed Matter Physics (67, ИНТЭЛ КАФ.67)

Leading Engineer

Научно-исследовательская лаборатория молекулярно-лучевой эпитаксии и нанолитографии центра радиофотоники и свч-технологий института нанотехнологий в электронике, спинтронике и фотонике НИЯУ МИФИ (Научно-исследовательская лаборатория молекулярно-лучевой эпитаксии и нанолитографии центра радиофотоники и свч-технологий института нанотехнологий в э)

Senior Research Fellow

Institute of Nuclear Electronics (Центр радиофотоники и свч-технологий института нанотехнологий в электронике, спинтронике и фотонике НИЯУ МИФИ)
  • Kорп. 44a 4 этаж каб. 13
  • 9191
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Languages

english
Works at MEPhI since 2020
Work Experience: 14 years

Courses

1. Condensed Matter Physics
2. Physics: Molecular Beam Epitaxy
3. Terahertz Photonics

Publication activity

6
h-index (Web of Science)
7
h-index (Scopus)
8
h-index (РИНЦ)

Showing publications for last 3 years

  1. Article
    Web of Science & Scopus
    Terahertz photoconductive antennas based on silicon-doped GaAs (111)A // International Journal of Modern Physics B, 2023 Q3 doi
  2. RSCI SUPERLATTICES InGaAs/GaAs WITH BUILT-IN ELECTRIC FIELD AS THz RADIATION SOURCESSUPERLATTICES InGaAs/GaAs WITH BUILT-IN ELECTRIC FIELD AS THz RADIATION SOURCES // 2023 pp. 96-97
  3. Article
    Web of Science & Scopus
    Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates // Russian Microelectronics, 2023 Vol. 52, No. 3, Q4 pp. 129-134 doi
  4. RSCI A REVIEW OF PROSPECTIVE MATERIALS FOR MAGNETIC FIELD SENSORS BASED ON HALL EFFECT FOR HARSH ENVIRONMENTA REVIEW OF PROSPECTIVE MATERIALS FOR MAGNETIC FIELD SENSORS BASED ON HALL EFFECT FOR HARSH ENVIRONMENT // 2023 pp. 178-179
  5. RSCI InAs FILMS ON SAPPHIRE SUBSTRATE WITH LOW TEMPERATURE COEFFICIENT OF RESISTANCEInAs FILMS ON SAPPHIRE SUBSTRATE WITH LOW TEMPERATURE COEFFICIENT OF RESISTANCE // 2023 pp. 166-167
  6. RSCI GROWTH AND CHARACTERIZATION OF GROUP III NITRIDES HEMT HETEROSTRUCTURES WITH AN AlN ULTRATHIN BARRIERGROWTH AND CHARACTERIZATION OF GROUP III NITRIDES HEMT HETEROSTRUCTURES WITH AN AlN ULTRATHIN BARRIER // 2023 pp. 29-30
  7. Article
    Web of Science & Scopus
    Si-Doping of Low-Temperature-Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates // Physica Status Solidi (B) Basic Research, 2023 Vol. 260, No. 2, Q3 doi
  8. Article
    Web of Science & Scopus
    GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates // Crystals, 2023 Vol. 13, No. 1, Q2 doi
  9. Article
    Web of Science & Scopus
    Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates // Nanobiotechnology Reports, 2022 Vol. 17 pp. S41-S44 doi
  10. Article
    Web of Science & Scopus
    Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates // Nanobiotechnology Reports, 2022 Vol. 17 pp. S18-S23 doi
  11. Article
    Web of Science & Scopus
    Improving the efficiency of terahertz antennas on topological insulators // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss, 2022 TOP10 doi
  12. Article
    Web of Science & Scopus
    THz quantum cascade lasers with two-photon emission in the gain module // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss, 2022 TOP10 doi
  13. RSCI EFFECT OF ZINC DIFFUSION REGIMES FROM A METALLIC LAYER ON THE ELECTROLUMINESCENCE CURRENT PARAMETERS OF THE InGaAs/AlGaAs/GaAs STRUCTURESEFFECT OF ZINC DIFFUSION REGIMES FROM A METALLIC LAYER ON THE ELECTROLUMINESCENCE CURRENT PARAMETERS OF THE InGaAs/AlGaAs/GaAs STRUCTURES // 2022 pp. 166-167
  14. RSCI TWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATIONTWO-PHOTON DESIGN FOR THz QUANTUM CASCADE LASERS: FROM IDEA TO EXPERIMENTAL DEMONSTRATION // 2022 pp. 92-93
  15. RSCI N-INAS FILMS ON SAPPHIRE SUBSTRATES OBTAINED BY MOLECULAR-BEAM EPITAXYN-INAS FILMS ON SAPPHIRE SUBSTRATES OBTAINED BY MOLECULAR-BEAM EPITAXY // 2022 pp. 88-89
  16. RSCI EFFECT OF NEUTRON IRRADIATION ON THE OPTICAL PROPERTIES OF DOPED QUANTUM WELLSEFFECT OF NEUTRON IRRADIATION ON THE OPTICAL PROPERTIES OF DOPED QUANTUM WELLS // 2022 pp. 22-23
  17. Article
    Web of Science & Scopus
    3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K // Semiconductors, 2022 Q4 doi
  18. Article
    Web of Science & Scopus
    Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures // Surfaces and Interfaces, 2022 Vol. 29, Q1 doi
  19. Article
    Web of Science & Scopus
    Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit // Physica E: Low-Dimensional Systems and Nanostructures, 2021 Vol. 133, Q1 doi

Showing conferences for last 3 years

Conferences not found

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