Personalities of MEPhI
NRNU MEPhI National Research Nuclear University MEPhI
  1. Faculty and Staff
  2. Marmalyuk A.A.
Marmalyuk A.A.

Marmalyuk Aleksandr A.

Degree: Doctor of Sciences in Technology

Professor

Department of Semiconductor Quantum Electronics
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Languages

english
Works at MEPhI since 2014
Work Experience: 10 years

Education

1994 — Moscow State University

Courses

1. Industry Primary Professional Skills workshop
2. Practical Training (Research Work)
3. Technology of Heterostructure Growth

Publication activity

11
h-index (Web of Science)
12
h-index (Scopus)

Showing publications for last 3 years

  1. Article
    Web of Science & Scopus
    Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers // Bulletin of the Lebedev Physics Institute, 2023 Vol. 50, No. Suppl 12, Q4 pp. S1356-S1360 doi
  2. Article
    Web of Science & Scopus
    New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm // Bulletin of the Lebedev Physics Institute, 2023 Vol. 50, No. Suppl 11, Q4 pp. S1246-S1251 doi
  3. Article
    Web of Science & Scopus
    Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers // Bulletin of the Lebedev Physics Institute, 2023 Vol. 50, Q4 pp. S1079-S1083 doi
  4. Article
    Web of Science & Scopus
    Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes // Quantum Electronics, 2022 Vol. 52, No. 6, Q3 pp. 577-579 doi
  5. Article
    Web of Science & Scopus
    Improvement of the current - Voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers ( λ = 940 - 980 nm) // Quantum Electronics, 2022 Vol. 52, No. 2, Q3 pp. 179-181 doi
  6. Article
    Web of Science & Scopus
    High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9-2.0 μm // Quantum Electronics, 2021 Vol. 51, No. 10, Q3 pp. 909-911 doi
  7. Article
    Web of Science & Scopus
    InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics // Quantum Electronics, 2021 Vol. 51, No. 10, Q3 pp. 905-908 doi
  8. Article
    Web of Science & Scopus
    Comparison of AlGaInAs/InP semiconductor lasers (l = 1450 - 1500 nm) with ultra-narrow and strongly asymmetric waveguides // Quantum Electronics, 2021 Vol. 51, No. 4, Q3 pp. 283-286 doi
  9. Article
    Web of Science & Scopus
    Semiconductor AlGaInAs/InP lasers (l = 1450 - 1500 nm) with a strongly asymmetric waveguide // Quantum Electronics, 2021 Vol. 51, No. 2, Q3 pp. 133-136 doi

Showing conferences for last 3 years

Conferences not found

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