Mavritskii O.B.

Mavritskii Oleg B.

Degree: Candidate of Sciences (PhD) in Technology

Associate Professor

Department of Solid-State Physics and Nanosystems

Engineer 1st Category

Department of Solid-State Physics and Nanosystems
Works at MEPhI since 1984
Work Experience: 45 years

Education

1979 — National Research Nuclear University MEPhI

Courses

1. Academic (Research) Practice:
2. Condensed Matter Physics
3. General laboratory workshop
4. Lab Workshop: Electric Oscillations
5. Photonics
6. Practical Training (Research Work)
7. Solid State Physics
8. Solid State Physics (in English)

Publication activity

6
h-index (Web of Science)
8
h-index (Scopus)
10
h-index (РИНЦ)

Showing publications for last 3 years

  1. RSCI MODELING OF PULSED LASER ANNEALING OF HZO-BASED FERROELECTRIC STRUCTURESMODELING OF PULSED LASER ANNEALING OF HZO-BASED FERROELECTRIC STRUCTURES // 2023 pp. 365-367
  2. Article
    Web of Science & Scopus
    Pulsed Laser Single-Event Effect Simulation in AD8400 using Two-Photon Absorption // Moscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings, 2022 TOP10 doi
  3. Article
    Web of Science & Scopus
    Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices // Proceedings of SPIE - The International Society for Optical Engineering, 2022 Vol. 12143, Q4 doi
  4. Article Pulsed Laser Single-Event Effect Simulation in AD8400 using Two-Photon Absorption // Proc. of 2022 Moscow Workshop on Electronic and Networking Technologies (MWENT), IEEE, 2022 pp. 1-5 doi
  5. Article Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices // Proc. SPIE 12143, Nonlinear Optics and its Applications 2022, (25 May 2022), 2022 Vol. 12143, No. 121430K pp. 1-8 doi

Showing conferences for last 3 years

  1. Апрель 2022 SPIE PHOTONICS EUROPE, 3-7 April 2022, Paper 12143-62 Report: Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices

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