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DTSTART;TZID=Europe/Moscow:20160906T101500
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DESCRIPTION:Kargin N.I. M16-801
LOCATION:K-716
SUMMARY:Breakthrough Trends of Global Scientific and Technological Developm
 ent
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DESCRIPTION:Kargin N.I.\, Gutbrod H. B13-402
LOCATION:dep.67
SUMMARY:Solid-state Electronics
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EXDATE:20161104T101500
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DESCRIPTION:Kargin N.I. M16-801
LOCATION:K-716
SUMMARY:Breakthrough Trends of Global Scientific and Technological Developm
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DESCRIPTION:Labunov V.\, Kargin N.I. M16-403
LOCATION:7-1
SUMMARY:Design and Simulation of Micro- and Nanoelectronics
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DTSTART;TZID=Europe/Moscow:20160909T124500
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DESCRIPTION:Labunov V.\, Kargin N.I. M16-403
LOCATION:V-106
SUMMARY:Design and Simulation of Micro- and Nanoelectronics
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DESCRIPTION:Gutbrod H.\, Kargin N.I. B13-402
LOCATION:dep.67
SUMMARY:Solid-state Electronics
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DTSTAMP:20260416T235059Z
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DTSTART;TZID=Europe/Moscow:20160909T143000
DTEND;TZID=Europe/Moscow:20160909T160500
DESCRIPTION:Kargin N.I.\, Labunov V. M16-403
LOCATION:K-409
SUMMARY:Design and Simulation of Micro- and Nanoelectronics
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DESCRIPTION:Gutbrod H.\, Kargin N.I. B13-402
LOCATION:dep.67
SUMMARY:Solid-state Electronics
RRULE:FREQ=WEEKLY;UNTIL=20161215T175000;WKST=MO
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DTSTAMP:20260416T235059Z
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DTSTART;TZID=Europe/Moscow:20170216T143000
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DESCRIPTION:Kargin N.I. A14-403
LOCATION:33-304
SUMMARY:Physics of High Current Electronics
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DTSTAMP:20260416T235059Z
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DTSTART;TZID=Europe/Moscow:20170209T143000
DTEND;TZID=Europe/Moscow:20170209T170000
DESCRIPTION:Kargin N.I. A14-403
LOCATION:33-304
SUMMARY:Physics of High Current Electronics
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DTSTART;TZID=Europe/Moscow:20170427T143000
DTEND;TZID=Europe/Moscow:20170427T170000
DESCRIPTION:Kargin N.I. A14-403
LOCATION:33-304
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DESCRIPTION:Kargin N.I. A14-403
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